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| SMD Type NPN Silicon Epitaxial Transistor 2SC3545 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Collector to Base Time Constant; CC rb' = 4 ps TYP. b Low Feedback Capacitance; Cre = 0.48 pF TYP. 0.55 High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 15 3.0 50 150 125 -65 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current DC Current Gain Collector Saturation Voltage Gain Bandwidth Product Output Capacitance Collector to Base Time Constant Symbol ICBO hFE Testconditons VCB = 12 V, IE = 0 VCE = 10 V, IC = 5.0 mA 50 100 Min Typ Max 0.1 250 0.5 1.3 2.0 0.48 4 1.0 1.0 V MHz pF ps Unit iA VCE(sat) IC = 10 mA, IB = 1.0 mA fT Cob VCE = 10 V, IE =-5.0 mA VCB = 10 V, IE = 0, f = 1.0 MHz CC. rb' VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz b hFE Classification Marking Rank hFE T42 M/P 50 100 T43 L/Q 70 140 T44 K/R 120 250 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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